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Stuart S P Parkin

This inventor holds 30 USPTO granted patents, primarily in Magnetic Memory Technology. Top assignees: International Business Machines Corporation, Samsung Electronics Co., Ltd.. Active years: 2003-2023.

USPTO Granted Patents = 30

% Patents Active = 86.7

Average Co-Inventor Count = 2.0

ph-index = 12

Forward Citations = 700(Granted Patents)

Location History:

Santa Clara, CA (US) (2017)
San Jose, CA (US) (2003 - 2023)

Company Filing History:

30 out of 166,264

International Business Machines Corporation

patents

9 out of 132,108

Samsung Electronics Co., Ltd.

patents

where one patent can have more than one assignee

Years Active: 2003-2023

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Areas of Expertise:

Heusler Compounds

Spin Transfer Torque

Magnetic Tunnel Junctions

Perpendicular Magnetic Anisotropy

Tunneling Magnetoresistance

Ferrimagnetic Materials

Magnetic Shift Register

Data Storage Devices

Stochastic Synapse Memory

Oxygen-Separating Device

Dissolved-Oxygen Sensor

Thermally Stable Cells

30 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11557721 - Heusler compounds with non-magnetic spacer layer for formation of synthetic anti-ferromagnets (SAF) (2023-01-17),

2. 11005029 - Spin transfer torque switching of a magnetic layer with volume uniaxial magnetic crystalline anistotropy (2021-05-11),

3. 10957848 - Heusler compounds with non-magnetic spacer layer for formation of synthetic anti-ferromagnets (SAF) (2021-03-23),

4. 10937953 - Tunable tetragonal ferrimagnetic heusler compound with PMA and high TMR (2021-03-02),

5. 10651234 - Templating layers for forming highly textured thin films of heusler compounds switchable by application of spin transfer torque (2020-05-12),

6. 10396123 - Templating layers for perpendicularly magnetized Heusler films (2019-08-27),

7. 10256490 - Oxygen-separating device utilizing ionic oxygen motion (2019-04-09),

8. 10247701 - Dissolved-oxygen sensor utilizing ionic oxygen motion (2019-04-02),

9. 10177305 - Templating layers for perpendicularly magnetized heusler films (2019-01-08),

10. 10170696 - MnN and Heusler layers in magnetic tunnel junctions (2019-01-01),

11. 9831422 - Magnetic memory devices having perpendicular magnetic tunnel junction (2017-11-28),

12. 9761793 - Magnetic memory device and method for manufacturing the same (2017-09-12),

13. 9666215 - Termination layer-compensated tunneling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy (2017-05-30),

14. 9406365 - Underlayers for textured films of Heusler compounds (2016-08-02),

15. 8518718 - Magnetic spin shift register memory (2013-08-27),

Title: Stuart S P Parkin - Innovator in San Jose

Introduction: Stuart S P Parkin is a renowned inventor based in San Jose, CA, known for his groundbreaking contributions to the field of magnetic materials and data storage technologies.

Latest Patents: Stuart S P Parkin holds several patents related to magnetic devices, data storage systems, and spintronics technologies, showcasing his continuous innovation in the industry.

Career Highlights: With a distinguished career spanning several decades, Stuart S P Parkin has worked at esteemed institutions such as IBM Research and Stanford University, where he has conducted pioneering research in nanotechnology and materials science.

Collaborations: Throughout his career, Stuart S P Parkin has collaborated with leading scientists and researchers worldwide, fostering a culture of innovation and knowledge exchange in the scientific community.

Conclusion: Stuart S P Parkin's relentless pursuit of innovation and his significant contributions to the field of magnetic materials have solidified his reputation as a visionary inventor in San Jose, CA.

Profile summary based on public USPTO records.

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