The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2019
Filed:
Oct. 26, 2017
International Business Machines Corporation, Armonk, NY (US);
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Jaewoo Jeong, San Jose, CA (US);
Stuart S. P. Parkin, San Jose, CA (US);
Mahesh G. Samant, San Jose, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
Materials are disclosed that are used as seed layers in the formation of MRAM elements. In particular, a MnN layer oriented in the (001) direction is grown over a substrate. A magnetic layer overlying and in contact with the MnN layer forms part of a magnetic tunnel junction, in which the magnetic layer includes a Heusler compound that includes Mn. The magnetic tunnel junction includes the magnetic layer, a tunnel barrier overlying the magnetic layer, and a first (magnetic) electrode overlying the tunnel barrier. A second electrode is in contact with the MnN layer.