The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2016

Filed:

Jan. 26, 2015
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Jaewoo Jeong, San Jose, CA (US);

Stuart S. P. Parkin, San Jose, CA (US);

Mahesh G. Samant, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/10 (2006.01); H01L 29/82 (2006.01); G11C 11/16 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); G11C 11/1673 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01);
Abstract

A structure includes a tetragonal Heusler of the form MnX, in which X includes an element selected from the group consisting of Ge and Ga, with 0≦c≦3. The tetragonal Heusler is grown directly on (or more generally, over) a substrate oriented in the direction (001) and of the form YMn, wherein Y includes an element selected from the group consisting of Ir and Pt, with 0≦d≦4. The tetragonal Heusler and the substrate are in proximity with each other, thereby allowing spin-polarized current to pass from one through the other. This structure may form part of a magnetic tunnel junction magnetoresistive device, and an array of such magnetoresistive devices may together form an MRAM.


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