The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2021
Filed:
Feb. 08, 2019
International Business Machines Corporation, Armonk, NY (US);
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Panagiotis Charilaos Filippou, San Jose, CA (US);
Chirag Garg, San Jose, CA (US);
Yari Ferrante, San Jose, CA (US);
Stuart S. P. Parkin, San Jose, CA (US);
Jaewoo Jeong, Los Altos, CA (US);
Mahesh G. Samant, San Jose, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Devices are described that include a multi-layered structure that comprises three layers. The first layer is a magnetic Heusler compound, the second layer (acting as a spacer layer) is non-magnetic at room temperature and comprises alternating layers of Ru and at least one other element E (preferably Al; or Ga or Al alloyed with Ga, Ge, Sn or combinations thereof), and the third layer is also a magnetic Heusler compound. The composition of the second layer is represented by RuE, with x being in the range from 0.45 to 0.55. An MRAM element may be constructed by forming, in turn, a substrate, the multi-layered structure, a tunnel barrier, and an additional magnetic layer (whose magnetic moment is switchable).