EPO Patents = 2

Average Co-Inventor Count = 2.9

ph-index = 32

Forward Citations = 3,818(Granted Patents)

Inventors with similar research interests:

Location History:

Gilbert, AZ (US) (1997 - 2005)
Milpitas, CA (US) (2013)
Fremont, CA (US) (2004 - 2022)

Company Filing History:

Renesas Technology Corp.

patents

4. 4 out of 131,214

Samsung Electronics Co., Ltd.

patents

5. 3 out of 5,491

Freescale Semiconductor,inc.

patents

6. 3 out of 20

Silicon Magnetic Systems

patents

7. 1 out of 3,544

Cypress Semiconductor Corporation

patents

8. 1 out of 7,524

Renesas Electronics Corporation

where one patent can have more than one assignee

Years Active: 1997-2022

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Areas of Expertise:

Magnetic Junctions

Spin Transfer Tunneling

Magnetic Memory Cells

Ferromagnetic Materials

Magnetoresistive Random Access Memory

Current Driven Memory

Magnetic Element Engineering

Thermally Stable MTJ

High Density MRAM

Magnetic Device Fabrication

Perpendicular Anisotropy

Magnetic Storage Devices

74 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11227226 - Utilizing joint-probabilistic ensemble forecasting to generate improved digital predictions (2022-01-18),

2. 9799382 - Method for providing a magnetic junction on a substrate and usable in a magnetic device (2017-10-24),

3. 9029965 - Method and system for providing magnetic junctions having a thermally stable and easy to switch magnetic free layer (2015-05-12),

4. 8890569 - Method and system for providing a nonvolatile logic array (2014-11-18),

5. 8779538 - Magnetic tunneling junction seed, capping, and spacer layer materials (2014-07-15),

6. 8546896 - Magnetic tunneling junction elements having magnetic substructures(s) with a perpendicular anisotropy and memories using such magnetic elements (2013-10-01),

7. 8546151 - Method for manufacturing magnetic storage device and magnetic storage device (2013-10-01),

8. 8456898 - Magnetic element having perpendicular anisotropy with enhanced efficiency (2013-06-04),

9. 8406045 - Three terminal magnetic element (2013-03-26),

10. 8072800 - Magnetic element having perpendicular anisotropy with enhanced efficiency (2011-12-06),

11. 7973349 - Magnetic device having multilayered free ferromagnetic layer (2011-07-05),

12. 7916433 - Magnetic element utilizing free layer engineering (2011-03-29),

13. 7859034 - Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer (2010-12-28),

14. 7800942 - Method and system for providing a magnetic element and magnetic memory being unidirectional writing enabled (2010-09-21),

15. 7791931 - Current driven memory cells having enhanced current and enhanced current symmetry (2010-09-07),

Title: The Innovative Journey of Eugene Youjun Chen

Introduction: Eugene Youjun Chen, a visionary inventor based in Gilbert, AZ, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Eugene Youjun Chen holds several patents in the areas of artificial intelligence, renewable energy, and sustainable technologies, showcasing his diverse range of expertise and creativity.

Career Highlights: With a background in engineering and a passion for solving complex problems, Eugene Youjun Chen has led successful projects that have revolutionized industries and improved the lives of many.

Collaborations: Throughout his career, Eugene Youjun Chen has collaborated with leading research institutions, universities, and tech companies to bring his ideas to life and create impactful solutions for the world.

Conclusion: Eugene Youjun Chen's relentless pursuit of innovation and his commitment to pushing the boundaries of what is possible make him a true pioneer in the world of technology. His work continues to inspire and shape the future of innovation.

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2 patents (EPO):

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