Motorola Corporation

Grandis, Inc.

Renesas Technology Corp.

Samsung Electronics Co., Ltd.

Freescale Semiconductor,inc.

Silicon Magnetic Systems

Renesas Electronics Corporation

Adobe, Inc.

Cypress Semiconductor Corporation

Eugene Youjun Chen

Saied N Tehrani

Mark A Durlam

Yiming Huai

Jon Michael Slaughter

Xiaodong T Zhu

Zhitao Diao

Kelly Wayne Kyler

Gloria J Kerszykowski

Lien-Chang Wang

Mark DeHerrera

Jing Shi

Dmytro Apalkov

Theodore Zhu

Herbert Goronkin

Xueti Tang

Kamel Ounadjela

Xiao Luo

Witold Kula

Renu Whig

Peter K Naji

Ronald N Legge

Clarence J Tracy

Shengyuan Wang

Alex Panchula

Mahendra Pakala

Jun Shen

Fredrick B Jenne

Shuichi Ueno

Takeharu Kuroiwa

Jangeun Lee

Sam G Geha

Zhenyu Yan

Ashish Pancholy

William M Peterson

Renu Whig Dave

Dustin William Erickson

Haruo Furuta

Ryoji Matsuda

X Theodore Zhu

Tatsuya Fukumura

Steven M Watts

Kaveh Milaninia

Steven A Voight

Thomas M Mnich

Chang Ju Choi

Benjamin C E Schwarz

Biju Parameshwaran

Alexander A G Driskill-Smith

Daniel K Lottis

Helen L Chung

Xiaojing Dong

William L Stevenson

Jerome S Wolfman

David W Cronk

Daniel Lottis

Methods, systems, and computer readable storage media are disclosed for generating joint-probabilistic ensemble forecasts for future events based on a plurality of different prediction models for the future events. For example, in one or more embodiments the disclosed system determines error values for various predictions from a plurality of different prediction models (i.e., 'forecasters') for previous events. Moreover, in one or more embodiments the system generates an error probability density function by mapping the error values to an error space and applying a kernel density estimation. Furthermore, the system can apply the error probability density function(s) to a plurality of predictions from the forecasters for a future event to generate a likelihood function and a new prediction for the future event.

Utilizing joint-probabilistic ensemble forecasting to generate improved digital predictions

A method for providing a magnetic junction usable in a magnetic device and a magnetic junction are described. A reference layer, a crystalline MgO tunneling barrier layer and a free layer are provided. The crystalline MgO tunneling barrier layer is continuous, has a (001) orientation and has a thickness of not more than eleven Angstroms and not less than two Angstroms. The crystalline MgO tunneling barrier layer is between the free layer and the reference layer. The magnetic junction is configured such that the free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

Method for providing a magnetic junction on a substrate and usable in a magnetic device

A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer includes a plurality of subregions. Each of the subregions has a magnetic thermal stability constant. The subregions are ferromagnetically coupled such that the free layer has a total magnetic thermal stability constant. The magnetic thermal stability constant is such that the each of the subregions is magnetically thermally unstable at an operating temperature. The total magnetic thermal stability constant is such that the free layer is magnetically thermally stable at the operating temperature. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

Method and system for providing magnetic junctions having a thermally stable and easy to switch magnetic free layer

A method and system provide and program a nonvolatile logic device. The nonvolatile logic device includes input and output magnetic junctions and at least one magnetic junction between the input and output magnetic junctions. The input magnetic junction includes an input junction free layer having an input junction easy axis. The input magnetic junction may be switchable using a current driven through the magnetic junction. The output magnetic junction includes an output junction free layer having an output junction easy axis. Each of the magnetic junction(s) includes a free layer having an easy axis. The input magnetic junction is magnetically coupled to the output magnetic junction through the magnetic junction(s). In some aspects, the method includes switching the magnetic moment(s) of the input magnetic junction from a first state to a second state, applying and then removing magnetic field(s) along the hard axis of the at least one magnetic junction.

Method and system for providing a nonvolatile logic array

In one embodiment, a magnetic element for a semiconductor device includes a reference layer, a free layer, and a nonmagnetic spacer layer disposed between the reference layer and the free layer. The nonmagnetic spacer layer includes a binary, ternary, or multi-nary alloy oxide material. The binary, ternary, or multi-nary alloy oxide material includes MgO having one or more additional elements selected from the group consisting of: Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo, and Rh.

Magnetic tunneling junction seed, capping, and spacer layer materials

A method and system for providing a magnetic substructure usable in a magnetic device, as well as a magnetic element and memory using the substructure are described. The magnetic substructure includes a plurality of ferromagnetic layers and a plurality of nonmagnetic layers. The plurality of ferromagnetic layers are interleaved with the plurality of nonmagnetic layers. The plurality of ferromagnetic layers are immiscible with and chemically stable with respect to the plurality of nonmagnetic layers. The plurality of ferromagnetic layers are substantially free of a magnetically dead layer-producing interaction with the plurality of nonmagnetic layers. Further, the plurality of nonmagnetic layers induce a perpendicular anisotropy in the plurality of ferromagnetic layers. The magnetic substructure is configured to be switchable between a plurality of stable magnetic states when a write current is passed through the magnetic substructure.

Magnetic tunneling junction elements having magnetic substructures(s) with a perpendicular anisotropy and memories using such magnetic elements

Disclosed is a method for manufacturing a magnetic storage device comprising a TMR element, which comprises a step for forming an insulting film on an interlayer insulating film provided with a wiring layer, an opening formation step for forming an opening in the insulating film so that the wiring layer is exposed therefrom, a metal layer formation step for forming a metal layer on the insulating layer so that the opening is filled therewith, a CMP step for polishing and removing the metal layer on the insulating layer by a CMP method and forming the metal layer remaining in the opening into a lower electrode, and a step for forming a TMR element on the lower electrode. Also disclosed is a magnetic storage device comprising an interlayer insulating film provided with a wiring layer, an insulating film formed on the interlayer insulating film, an opening formed in the insulating film so that the wiring layer is exposed therefrom, a barrier metal layer provided so as to cover the inner surface of the opening, a lower electrode formed on the barrier metal so as to fill the opening, and a TMR element formed on the lower electrode.

Method for manufacturing magnetic storage device and magnetic storage device

Techniques and magnetic devices associated with a magnetic element that includes a fixed layer having a fixed layer magnetization and perpendicular anisotropy, a nonmagnetic spacer layer, and a free layer having a changeable free layer magnetization and perpendicular anisotropy.

Magnetic element having perpendicular anisotropy with enhanced efficiency

Techniques and magnetic devices associated with a magnetic element are described that includes a presetting fixed layer having a presetting fixed layer magnetization, a free layer having a changeable free layer magnetization, and a fixed layer having a fixed layer magnetization, where a presetting current pulse applied between the presetting fixed layer and free layer operates to preset the free layer magnetization in advance of a write pulse. Techniques and magnetic devices associated with a magnetic element are described that includes a first terminal, a first magnetic tunnel junction, a second terminal, a second magnetic tunnel junction, and a third terminal, where a current pulse applied between the first and second terminal operate to switch the state of the first magnetic tunnel junction and a current applied between the second and third terminal operate to switch the state of the second magnetic tunnel junction.

Three terminal magnetic element

Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers. Each free ferromagnetic layer can include two or more layers and may be a multilayered free ferromagnetic stack that includes first and second ferromagnetic layers and a non-magnetic spacer between the first and second ferromagnetic layers.

Magnetic device having multilayered free ferromagnetic layer

A method and system for providing a magnetic element are described. The method and system include providing a pinned layer, a barrier layer, and a free layer. The free layer includes a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first ferromagnetic layer and the second ferromagnetic layer. The barrier layer resides between the pinned layer and the free layer and includes MgO. The first ferromagnetic layer resides between the barrier layer and the intermediate layer. The first ferromagnetic layer includes at least one of CoFeX and CoNiFeX, with X being selected from the group of B, P, Si, Nb, Zr, Hf, Ta, Ti, and being greater than zero atomic percent and not more than thirty atomic percent. The first ferromagnetic layer is ferromagnetically coupled with the second ferromagnetic layer. The intermediate layer is configured such that the first ferromagnetic layer has a first crystalline orientation and the second ferromagnetic layer has a second crystalline orientation different from the first ferromagnetic layer.

Magnetic element utilizing free layer engineering

Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers to switch the magnetization of the free ferromagnetic layer.

Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer

A method and system for providing a magnetic element and memory utilizing the magnetic element are described. The magnetic element includes a reference layer, a nonferromagnetic spacer layer, and a free layer. The reference layer has a resettable magnetization that is set in a selected direction by a magnetic field generated externally to the reference layer. The reference layer is also magnetically thermally unstable at an operating temperature range and has KV/kT is less than fifty five. The spacer layer resides between the reference layer and the free layer. In addition, the magnetic element is configured to allow the free layer to be switched to each of a plurality of states when a write current is passed through the magnetic element.

Method and system for providing a magnetic element and magnetic memory being unidirectional writing enabled

A method and system for providing and using a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells. Each magnetic storage cell includes a magnetic element and a selection device coupled with the magnetic element. The magnetic element is programmed by write currents driven through the magnetic element in a first or second direction. In one aspect, the method and system include providing a voltage supply and a voltage pump coupled with the magnetic storage cells and the voltage supply. The voltage supply provides a supply voltage. The voltage pump provides to the selection device a bias voltage having a magnitude greater than the supply voltage. Another aspect includes providing a silicon on oxide transistor as the selection device. Another aspect includes providing to the body of the transistor a body bias voltage that is a first voltage when the transistor is off and a second voltage when the transistor is on.

Current driven memory cells having enhanced current and enhanced current symmetry

Growing community of inventors

Gilbert, AZ, United States of America

Eugene Youjun Chen