The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 2018

Filed:

Oct. 18, 2017
Applicant:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Inventors:

Don Koun Lee, San Jose, CA (US);

Mohamad Towfik Krounbi, San Jose, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/08 (2006.01); H01L 43/02 (2006.01); G11C 11/16 (2006.01); H01L 43/12 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); G11C 11/161 (2013.01); H01L 27/222 (2013.01); H01L 43/02 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract

A magnetic junction, a memory using the magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes a pinned layer, a perpendicular enhancement layer (PEL), an insertion layer between the pinned layer and PEL, a free layer and a nonmagnetic spacer layer between the PEL and free layer. The insertion layer includes at least one magnetic material and at least one high crystallization temperature nonmagnetic material. The PEL is between the insertion layer and the nonmagnetic spacer layer. The free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. The PEL and free and pinned layers each has a perpendicular magnetic anisotropy energy greater than its out-of-plane demagnetization energy.


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