The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 01, 2019

Filed:

Mar. 24, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Dmytro Apalkov, San Jose, CA (US);

Donkoun Lee, Sunnyvale, CA (US);

Mohamad Krounbi, San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/82 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract

A magnetic memory device and a method to make the device is disclosed. The magnetic memory device comprises a free magnetic layer that includes a hard magnetic material layer, a soft magnetic material layer and a coupling layer that is between the hard magnetic material layer and the soft magnetic material layer. The coupling layer comprises a magnetic material that has oxidized edges. In one embodiment, the magnetic material of the coupling layer comprises a Heusler alloy or a silicon-based magnetic material. A predetermined amount of the coupling layer is oxidized to controllably reduce the switching current Jof the free magnetic layer to be about half of the switching current if the coupling layer comprised substantially all magnetic material and no oxide.


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