International Business Machines Corporation

Samsung Electronics Co., Ltd.

Western Digital (fremont), Inc.

Hitachi Global Storage Technologies Netherlands B.v.

Western Digital Technologies, Inc.

Other

Grandis, Inc.

Samsung Semiconductor Inc.

Hitachi Global Technologies

Mohamad Towfik Krounbi

Xueti Tang

Dmytro Apalkov

Vladimir Nikitin

Po-Kang Wang

Gen Feng

Alexey Vasilyevitch Khvalkovskiy

Moris Musa Dovek

Yingjian Chen

Robert Fontana

Kochan Ju

Mao-Min Chen

Otto Voegeli

Douglas Johnson Werner

Ming Zhao

James Hsi-Tang Lee

Mark E Re

David John Seagle

Wei Zhang

Richard Hsiao

Ching Hwa Tsang

Satoru Araki

Virgil S Speriosu

Yining Hu

Ikhtiar

Donkoun Lee

Kroum Stanimirov Stoev

Jinqiu Zhang

Francis H Liu

Dustin William Erickson

Don Lee

Mustafa Pinarbasi

Thomas Young Chang

Hugo Alberto Emilio Santini

Robert L Cloke

Hugo Alberto Santini

Jack M Chue

Edward Hinpong Lee

Alfred Floyd Renaldo

Xiaozhong Dang

David Price Turner

Kiseok Moon

Kenneth Ting-Yuan Kung

John Cuda

Gary L Dunbar

Jeffrey William Carr

Jim Watterston

Adrian E Ong

James Mac Freitag

Matthew Joseph Carey

Karl Arnold Belser

Zhitao Diao

Jyh-Shuey Jerry Lo

Jaewoo Jeong

Lien-Chang Wang

Woo Chang Lim

David Patrick Druist

Mark David Thomas

Joseph Adam Aboaf

Roman Chepulskyy

Marcos Moises Lederman

Ki Woong Kim

Denny D Tang

Michael Paul Salo

Ian L Sanders

Wayne Leung Cheung

Hai Jiang

Se Chung Oh

Steven M Watts

Ju-Hi John Hong

Jose Antonio Medina

Thomas E Dinan

Haifeng Wang

Jang Eun Lee

Scott Arthur Thomas

Hin P Lee

Mary Kathryn Gutberlet

Li He

Kyoung Sun Kim

Henry H Yuan

Tiffany Yun Wen Jiang

Thomas J Beaulieu

Owen R Melroy

Alexander A G Driskill-Smith

Arshad Ahmed Alfoqaha

Volodymyr Voznyuk

Daniel A Buttry

Joseph Shao-Ying Feng

Chang-Man Park

Sandrawattie Sankar

Kenneth R Young

Vincent Noel Kahwaty, Deceased

Alvin M Patlach

Robert M Valletta

Jacqueline K Latimer

Jyh-Shiliey Jerry Lo

Gerald G Lopatin

Kenneth Kung

Arthur L Thaver, Jr

George V Kelley

A magnetic junction usable in a magnetic device is described. The magnetic junction includes a free layer and an oxide interlayer on the free layer. The oxide interlayer includes at least one glass-forming agent. In some aspects, the magnetic junction includes a reference layer and a nonmagnetic spacer layer being between the reference layer and the free layer. The free layer is between the nonmagnetic spacer layer and the oxide interlayer.

Oxide interlayers containing glass-forming agents

A magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, an oxide layer and at least one oxygen blocking layer. The free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. The nonmagnetic spacer layer is between the pinned layer and the free layer. The oxide layer is adjacent to the free layer. The free layer is between the nonmagnetic spacer layer and the oxide layer. The oxygen blocking layer(s) has a position selected from adjacent to the oxide layer and adjacent to the pinned layer. In some aspects, the magnetic junction may also include an oxygen adsorber layer and/or a tuning layer.

Method and system for providing magnetic junctions utilizing oxygen blocking, oxygen adsorber and tuning layer(s)

A magnetic tunnel junction stack includes: a pinned layer; a main oxide barrier layer on the pinned layer; a free layer on the main oxide barrier layer; and a hybrid oxide/metal cap layer on the free layer. The hybrid oxide/metal cap layer includes: a first oxide layer on the free layer; a second oxide layer on the first oxide layer; and a metallic cap layer on the second oxide layer, wherein the free layer is free of boron (B).

Hybrid oxide/metal cap layer for boron-free free layer

A magnetic junction, a memory using the magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a M-containing oxide layer adjacent to the free layer. M includes at least one of Ti, Al, Hf, Zr, Mo, V and Nb. The free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. The nonmagnetic spacer layer is between the reference layer and the free layer. The free layer is between the nonmagnetic spacer layer and the M-containing oxide layer.

Method and system for providing magnetic junctions utilizing metal oxide layer(s)

A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element.

Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements

A magnetic device and method for providing the device are described. The magnetic device includes magnetic junction(s) and spin-orbit interaction active layer(s) adjacent to the magnetic junction free layer(s). The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states. Providing the pinned and/or free layer(s) includes providing a magnetic layer including a glass-promoting component, providing a sacrificial oxide on the magnetic layer, providing a sacrificial layer on the sacrificial oxide and performing anneal(s) of the magnetic layer, the sacrificial oxide layer and the sacrificial layer at anneal temperature(s) greater than 300 degrees Celsius and not exceeding 475 degrees Celsius. The magnetic layer is amorphous as-deposited but is at least partially crystallized after the anneal(s). The sacrificial layer includes a sink for the glass-promoting component. The sacrificial layer and the sacrificial oxide are removed after the anneal(s).

Method and system for providing a magnetic layer in a magnetic junction usable in spin transfer or spin orbit torque applications using a sacrificial oxide layer

A magnetic device and method for providing the magnetic device junction are described. The magnetic device includes magnetic junctions and spin-orbit interaction (SO) active layer(s). The magnetic junction includes a pinned layer, a perpendicular enhancement layer (PEL), an insertion layer between the pinned layer and PEL, a free layer and a nonmagnetic spacer layer between the PEL and free layer. The insertion layer includes at least one magnetic material and at least one high crystallization temperature nonmagnetic material. The PEL is between the insertion layer and the nonmagnetic spacer layer. The free layer is switchable between a plurality of stable magnetic states. The PEL and free and pinned layers each has a perpendicular magnetic anisotropy energy greater than its out-of-plane demagnetization energy. The SO active layer(s) are adjacent to the free layer, carry a current in-plane and exert a SO torque on the free layer due to the current.

Method and system for providing magnetic junctions utilizing high crystallization temperature-containing insertion layer(s)

A magnetic junction and method for providing the magnetic junction are described. The method includes providing a pinned layer, a nonmagnetic spacer layer and a free layer switchable between stable magnetic states. The nonmagnetic spacer layer is between the pinned and free layers. Providing the pinned layer and/or providing the free layer includes cooling a portion of the magnetic junction, depositing a wetting layer while the portion of the magnetic junction is cooled, oxidizing/nitriding the wetting layer and depositing a boron-free magnetic layer on the oxide/nitride wetting layer. The portion of the magnetic junction is cooled to within a temperature range including temperature(s) not greater than 250 K. The wetting layer has a thickness of at least 0.25 and not more than three monolayers. The wetting layer includes at least one magnetic material. The boron-free magnetic layer has a perpendicular magnetic anisotropy energy greater than an out-of-plane demagnetization energy.

Method and system for providing a boron-free magnetic layer in perpendicular magnetic junctions

A magnetic device and method for providing the magnetic device are described. The magnetic device includes magnetic junctions and spin-orbit interaction (SO) active layer(s). Each magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The pinned layer has a perpendicular magnetic anisotropy (PMA) energy greater than an out-of-plane demagnetization energy. The pinned layer includes a magnetic barrier layer between a magnetic layer and a high PMA layer including at least one nonmagnetic component. The magnetic barrier layer includes Co and at least one of Ta, W and Mo. The magnetic barrier layer is for blocking diffusion of the nonmagnetic component. The SO active layer(s) are adjacent to the free layer. The SO active layer(s) carry a current in-plane and exert a SO torque on the free layer due to the current. The free layer is switchable between stable magnetic states using the SO torque.

Method and system for providing a magnetic junction usable in spin transfer or spin-orbit torque applications and including a magnetic barrier layer

A magnetic memory device and a method to make the device is disclosed. The magnetic memory device comprises a free magnetic layer that includes a hard magnetic material layer, a soft magnetic material layer and a coupling layer that is between the hard magnetic material layer and the soft magnetic material layer. The coupling layer comprises a magnetic material that has oxidized edges. In one embodiment, the magnetic material of the coupling layer comprises a Heusler alloy or a silicon-based magnetic material. A predetermined amount of the coupling layer is oxidized to controllably reduce the switching current Jof the free magnetic layer to be about half of the switching current if the coupling layer comprised substantially all magnetic material and no oxide.

Hybrid-fl with edge-modified coupling

A method for providing magnetic junctions is described. Each magnetic junction includes a free layer. A first portion of a stack for the magnetic junctions is provided. The first portion of a stack includes magnetic layer(s) for the free layer. A hard mask is provided. The hard mask covers a part of the first portion of the stack corresponding to the magnetic junctions. The hard mask includes aperture(s) exposing a second part of the first portion of the stack corresponding to spacing(s) between the magnetic junctions. The spacing(s) are not more than fifty nanometers. The second part of the first portion of the stack is etched. A remaining part of the first portion of the stack forms a first portion of each magnetic junction. This first portion of each magnetic junction includes the free layer. A second portion of the stack for the magnetic junctions is also provided.

Method and system for providing a magnetic junction usable in spin transfer torque applications using multiple stack depositions

A magnetic memory device comprises a first reference magnetic layer, a first tunnel barrier layer, a second tunnel barrier layer, and a free magnetic layer disposed between the first tunnel barrier layer and the second tunnel barrier layer. A magnitude of an in-plane magnetostatic field from the first reference magnetic layer at an edge of the free magnetic layer is less than about 500 Oe. One embodiment comprises a second reference magnetic layer on the second tunnel barrier layer in which the first reference magnetic layer, the first tunnel barrier layer, the free magnetic layer, the second tunnel barrier layer and the second reference magnetic layer are arranged as a stack, and in which a width of the first tunnel barrier layer, the free magnetic layer, the second tunnel barrier and the second reference magnetic layer in a second direction is less than about 30 nm.

DMTJ structure for sub-25NM designs with cancelled flowering field effects

A magnetic junction, a memory using the magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes a pinned layer, a perpendicular enhancement layer (PEL), an insertion layer between the pinned layer and PEL, a free layer and a nonmagnetic spacer layer between the PEL and free layer. The insertion layer includes at least one magnetic material and at least one high crystallization temperature nonmagnetic material. The PEL is between the insertion layer and the nonmagnetic spacer layer. The free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. The PEL and free and pinned layers each has a perpendicular magnetic anisotropy energy greater than its out-of-plane demagnetization energy.

A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. Providing the pinned and/or free layer(s) includes providing a magnetic layer including a glass-promoting component, providing a sacrificial oxide layer on the magnetic layer, providing a sacrificial layer on the sacrificial oxide layer and performing at least one anneal of the magnetic layer, the sacrificial oxide layer and the sacrificial layer at anneal temperature(s) greater than 300 degrees Celsius and not exceeding 475 degrees Celsius. The magnetic layer is amorphous as-deposited but is at least partially crystallized after the anneal(s). The sacrificial layer includes a sink for the glass-promoting component. The sacrificial layer and the sacrificial oxide layer are removed after the anneal(s).

Method and system for providing a magnetic layer in a magnetic junction usable in spin transfer torque applications using a sacrificial oxide layer

A magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free layer has a free layer perpendicular magnetic anisotropy energy greater than a free layer out-of-plane demagnetization energy. The free layer includes a [CoFeB]Molayer, where u+t=1, x+y+z=1 and u, t, x, y and z are each nonzero. The [CoFeB]Molayer has a perpendicular magnetic anisotropy energy greater than its out-of-plane demagnetization energy.

Method and system for providing a low moment CoFeBMo free layer magnetic junction usable in spin transfer torque applications

Growing community of inventors

San Jose, CA, United States of America

Mohamad Towfik Krounbi