Company Filing History:

7 out of 19,697

Denso Corporation

patents

6 out of 3,252

Nippondenso Co., Ltd.

Shin-etsu Handotai Co., Ltd.

patents

where one patent can have more than one assignee

Years Active: 1993-2013

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15 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8410573 - SOI (silicon on insulator) structure semiconductor device and method of manufacturing the same (2013-04-02),

2. 8035154 - Semiconductor device including a plurality of memory cells with no difference in erasing properties (2011-10-11),

3. 7796442 - Nonvolatile semiconductor memory device and method of erasing and programming the same (2010-09-14),

4. 7642653 - Semiconductor device, wiring of semiconductor device, and method of forming wiring (2010-01-05),

5. 6914288 - EEPROM and EEPROM manufacturing method (2005-07-05),

6. 6339557 - Charge retention lifetime evaluation method for nonvolatile semiconductor memory (2002-01-15),

7. 6337249 - Semiconductor device and fabrication process thereof (2002-01-08),

8. 6236085 - Semiconductor memory device having high-concentration region around electric-field moderating layer in substrate (2001-05-22),

9. 5753556 - Method of fabricating a MIS transistor (1998-05-19),

10. 5736770 - Semiconductor device with conductive connecting layer and abutting (1998-04-07),

11. 5675167 - Enhancement-type semiconductor having reduced leakage current (1997-10-07),

12. 5532176 - Process for fabricating a complementary MIS transistor (1996-07-02),

13. 5383993 - Method of bonding semiconductor substrates (1995-01-24),

14. 5334870 - Complementary MIS transistor and a fabrication process thereof (1994-08-02),

15. 5223450 - Method of producing semiconductor substrate having dielectric separation (1993-06-29),

Title: The Innovations of Mitsutaka Katada

Introduction

Mitsutaka Katada is a prominent inventor based in Hoi-gun, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 15 patents. His work focuses on enhancing the performance and reliability of semiconductor devices.

Latest Patents

Among his latest patents is a SOI (silicon on insulator) structure semiconductor device and method of manufacturing the same. This invention involves forming a lattice distortion layer by implanting Ar ions into a silicon substrate, which serves as an active layer. The lattice distortion layer acts as a gettering site, preventing leakage current while maintaining tensile stress within specified limits. Another notable patent is for a semiconductor device that includes a plurality of memory cells with consistent erasing properties. This device features a semiconductor substrate, memory cells, bit lines, and source lines, all designed to optimize performance and reliability.

Career Highlights

Mitsutaka Katada has worked with notable companies such as Denso Corporation and Nippondenso Co., Ltd. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Throughout his career, Katada has collaborated with esteemed colleagues, including Hidetoshi Muramoto and Tsutomu Kawaguchi. These partnerships have fostered a collaborative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

Mitsutaka Katada's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His work continues to influence advancements in semiconductor devices, showcasing the importance of innovation in technology.

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