The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 1995

Filed:

Sep. 10, 1993
Applicant:
Inventors:

Mitsutaka Katada, Kariya, JP;

Kazuhiro Tsuruta, Oobu, JP;

Seiji Fujino, Toyota, JP;

Michitoshi Onoda, Toyohashi, JP;

Assignee:

Nippon Soken Inc., Nishio, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
156153 ; 1562739 ; 156281 ; 437921 ; 437974 ; 437225 ; 148D / ; 148D / ; 148D / ;
Abstract

In a method of bonding semiconductor substrates, a plurality of the semiconductor substrates are first prepared. Surfaces of the semiconductor substrates are mirror-polished. The mirror-polished surface of at least one of the semiconductor substrates is then provided with a hydrophilic property in such a way that an oxide layer is formed on the mirror-polished surface by exposing the mirror-polished surface to an atmosphere of at least one of an oxygen ion and an oxygen radical. A water molecule is then adhered to the mirror-polished surface. The semiconductor substrates then contact with each other through the mirror-polished surface. The contacted semiconductor substrates are then heated. According to such a method of bonding, the semiconductor substrates are strongly bonded to each other with hardly an unbonded region even if the semiconductor substrates are heated at a low temperature.


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