The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 1998
Filed:
May. 24, 1994
Applicant:
Inventors:
Assignee:
Nippondenso Co., Ltd., Kariya, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257382 ; 257384 ; 257377 ; 257508 ; 257754 ; 257755 ; 257759 ; 257760 ; 257641 ; 257649 ;
Abstract
A semiconductor device comprising: a semiconductor substrate; a diffused region extending from the surface and to the inside of the semiconductor substrate; a first insulating layer formed on the semiconductor substrate and having a contact hole located through which the diffused region is exposed; a first conductor layer formed on a portion of the first insulating layer and connected so the diffused region through the first contact hole; and an insulator section made of an oxide of the substance of the first conductor layer and formed on another portion of the first insulating layer to surround the first conductor layer.