The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2010
Filed:
Mar. 31, 2008
Mitsutaka Katada, Hoi-gun, JP;
Yukiaki Yogo, Okazaki, JP;
Akira Tai, Okazaki, JP;
Yukihiko Watanabe, Nagoya, JP;
Mitsutaka Katada, Hoi-gun, JP;
Yukiaki Yogo, Okazaki, JP;
Akira Tai, Okazaki, JP;
Yukihiko Watanabe, Nagoya, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A nonvolatile semiconductor memory device includes a semiconductor substrate having a source, a drain, and a channel region between the source and the drain. The channel region has a first end portion near the drain, a second end portion near the source, and a middle portion between the first and second end portions. The first and second end portions having approximately same width. The memory device is electrically erased by using a hot carrier generated in the first end portion due to avalanche breakdown. The channel region includes a first channel extending from the drain and a second channel adjacent to the first channel. An impurity concentration of the second channel is higher than that of the first channel. An interface between the first and second channels is located in the middle portion between the first and second end portions.