The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2005

Filed:

Sep. 12, 2003
Applicants:

Hiroyasu Itou, Nagoya, JP;

Mitsutaka Katada, Hoi-gun, JP;

Hidetoshi Muramoto, Okazaki, JP;

Inventors:

Hiroyasu Itou, Nagoya, JP;

Mitsutaka Katada, Hoi-gun, JP;

Hidetoshi Muramoto, Okazaki, JP;

Assignee:

Denso Corporation, Kariya, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/336 ; H01L029/76 ; H01L029/788 ;
U.S. Cl.
CPC ...
Abstract

A memory transistor of an EEPROM has a floating gate electrode of a shape such that it covers the entirety of a tunnel film and a channel region and does not cover a region between the channel region and an embedded layer. And, a control gate electrode is formed on an interlayer insulating film on the floating gate electrode into a shape such that it is wider than the floating gate electrode above the tunnel film, and is narrower than the floating gate electrode above the channel region.


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