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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5223450 B1

PDFFull Text
Date of Patent:
Jun. 29, 1993

Filed:

Apr. 01, 1991

Method of producing semiconductor substrate having dielectric separation

Applicant:
Inventors:

Seiji Fujino, Toyota, JP;

Masaki Matsui, Nagoya, JP;

Mitsutaka Katada, Kariya, JP;

Kazuhiro Tsuruta, Ohbu, JP;

Assignee:

Nippon Soken, Inc., Nishio, JP;

Attorney:

Cushman, Darby & Cushman

Primary Examiner:

Brian E Hearn

Assistant Examiner:

Kevin M Picardat

Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 62 ; 437 67 ; 437247 ; 437927 ; 437981 ; 148D / ; 148D / ; 148D / ;
Abstract

A dielectric buried layer is formed inside substrates which are directly bonded together. Firstly, a groove or a recess, or both are formed on the principal bonding plane of one of at least two kinds of semiconductor substrates to be bonded together. Once the semiconductor substrates are bonded together, the groove and recess form a space, which is filled with dielectric. Before forming the dielectric buried layer, the invention carries out a process of removing potential damage from corners of the groove and/or recess.

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Fujino, Seiji. (1993). Method of producing semiconductor substrate having dielectric separation (U.S. Patent No. 5223450). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5223450

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