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For the Inventor, By the Inventor

Dallas, TX, United States of America

Ming J Hwang

This inventor holds 24 USPTO granted patents and 1 EPO patent. Top assignee: Texas Instruments Corporation. Active years: 1992-2004.

USPTO Granted Patents = 24

% Patents Active = 100.0


Average Co-Inventor Count = 3.3

ph-index = 9

Forward Citations = 278(Granted Patents)


Location History:

  • Richardson, TX (US) (1992 - 2001)
  • Dallas, TX (US) (2000 - 2004)

Company Filing History:

goldMedal24 out of 29,854 
 
Texas Instruments Corporation
 patents

Years Active: 1992-2004

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24 patents (USPTO):Explore Patents
1. 6835672 - Selective oxidation for semiconductor device fabrication (2004-12-28),
2. 6794308 - Method for reducing by-product deposition in wafer processing equipment (2004-09-21),
3. 6730613 - Method for reducing by-product deposition in wafer processing equipment (2004-05-04),
4. 6423648 - Controllable oxidation technique for the formation of high-quality ultra-thin gate oxide using carbon dioxide as the oxidizing agent (2002-07-23),
5. 6423627 - Method for forming memory array and periphery contacts using a same mask (2002-07-23),
6. 6352941 - Controllable oxidation technique for high quality ultrathin gate oxide formation (2002-03-05),
7. 6290808 - Chemical mechanical polishing machine with ultrasonic vibration and method (2001-09-18),
8. 6245605 - Method to protect metal from oxidation during poly-metal gate formation in semiconductor device manufacturing (2001-06-12),
9. 6239479 - Thermal neutron shielded integrated circuits (2001-05-29),
10. 6234374 - Rapid and selective heating method in integrated circuit package assembly by means of tungsten halogen light source (2001-05-22),
11. 6218311 - Post-etch treatment of a semiconductor device (2001-04-17),
12. 6214710 - Method for a semiconductor device having reduced contact resistance and leakage (2001-04-10),
13. 6207561 - Selective oxidation methods for metal oxide deposition on metals in capacitor fabrication (2001-03-27),
14. 6187656 - CVD-based process for manufacturing stable low-resistivity poly-metal gate electrodes (2001-02-13),
15. 6184129 - Low resistivity poly-silicon gate produced by selective metal growth (2001-02-06),

Title: Inventor Ming J Hwang - Revolutionizing Technology in Dallas

Introduction: Ming J Hwang is a visionary inventor based in Dallas, Texas, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Ming J Hwang holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing his diverse range of expertise and innovative spirit.

Career Highlights: With a career spanning over two decades, Ming J Hwang has worked with leading tech companies, research institutions, and universities to develop cutting-edge solutions that have had a significant impact on various industries.

Collaborations: Ming J Hwang has collaborated with top scientists, engineers, and researchers from around the world, fostering a culture of innovation and excellence in all his projects.

Conclusion: Ming J Hwang's relentless pursuit of innovation and his passion for pushing the boundaries of technology make him a true pioneer in the field, inspiring the next generation of inventors and entrepreneurs.

Profile summary based on public USPTO records.
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