The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2001
Filed:
Aug. 05, 1999
Applicant:
Inventors:
Ming Hwang, Dallas, TX (US);
Wei-Yung Hsu, Dallas, TX (US);
Chih-Chen Cho, Richardson, TX (US);
Dirk N. Anderson, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18238 ; H01L 2/1322 ; H01L 2/13205 ; H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/18238 ; H01L 2/1322 ; H01L 2/13205 ; H01L 2/14763 ;
Abstract
A method for protecting metal (,) from oxidation during various oxidation steps such as CVD SiO2 oxidation for forming an overlying oxide layer (,), smile oxidation, and sidewall (,) deposition. The gas CO2 is added to the oxidation chemistry. The CO2/H2 ratio is controlled for selective oxidation. The metal (,) is effectively protected from oxidation due to the existence of both H2 and CO2 as strong reduction reagents.