The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2001
Filed:
Jun. 17, 1999
Applicant:
Inventors:
Jeffrey A. McKee, Grapevine, TX (US);
Ming J. Hwang, Dallas, TX (US);
Chih-Chen Cho, Richardson, TX (US);
William R. McKee, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract
Post-etch treatment of an etch-damaged semiconductor device includes forming a protective cover (,) over an oxidizable section (,) of the semiconductor device. The protective cover (,) is operable to at least inhibit oxidation of the oxidizable section (,). While the oxidizable section (,) is covered, an oxide structure (,) is formed. The oxide structure (,) is operable to at least ameliorate etch damage to the semiconductor device.