The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2001
Filed:
Sep. 23, 1999
Ming Hwang, Dallas, TX (US);
Jiong-Ping Lu, Dallas, TX (US);
Duane E. Carter, Plano, TX (US);
Wei-Yung Hsu, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method for fabricating a low resistivity polymetal silicide conductor/gate comprising, the steps of forming a polysilicon (,) over a gate oxide (,) followed by protection of the polysilicon (,) with a sacrificial material (,), is disclosed. Gate sidewalls (,) are created to protect the sides of the polysilicon (,) and the sacrificial material (,), followed by stripped the sacrificial material (,) to expose the top surface of the polysilicon (,). Next, a diffusion barrier (,) is deposited over the exposed polysilicon (,) and a metal layer (,) is selectively grown on the diffusion barrier (,) to form a gate contact and conductor. Finally, a dielectric layer (,) is deposited over the selectively grown metal layer (,), the sidewalls (,) and the gate oxide (,).