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For the Inventor, By the Inventor

Shanghai, China

Mieno Fumitake

This inventor holds 40 USPTO granted patents and 3 published patent applications, primarily in FinFET Technology. Top assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation, Semiconductor Manufacturing International Corp.. Active years: 2005-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mieno Fumitake. Retrieved from https://idiyas.com/inventor/mieno-fumitake

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 40 

% Patents Active = 100.0

Average Co-Inventor Count = 1.2

ph-index = 7

Forward Citations = 147(Granted Patents)


Location History:

  • Beijing, CN (2014 - 2016)
  • Shanghai, CN (2005 - 2017)

Company Filing History:

goldMedal30 out of 1,750 
 
Semiconductor Manufacturing International (Shanghai) Corporation
 patents
silverMedal16 out of 948 
 
Semiconductor Manufacturing International (Beijing) Corporation
 patents
bronzeMedal7 out of 78 
 
Semiconductor Manufacturing International Corp.
 patents
where one patent can have more than one assignee

Years Active: 2005-2017

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Areas of Expertise:
Fin Field Effect Transistor
Static Random Access Memory
Semiconductor Device
Heterojunction Transistor
Magnetic Tunnel Junction
Twin Bit Structure Cell
Nano-Crystalline Silicon
High Energy Electromagnetic Radiation
Amorphous Silicon
TFT MONOS
Fabrication Method
Integrated Circuits
40 patents (USPTO):Explore Patents
1. 9853030 - Fin field effect transistor (2017-12-26),
2. 9543390 - Transistor having a heterojunction and manufacturing method thereof (2017-01-10),
3. 9437597 - Static random access memory (SRAM) device with FinFET transistors (2016-09-06),
4. 9362331 - Method and system for image sensor and lens on a silicon back plane wafer (2016-06-07),
5. 9362286 - Fin field effect transistor and method for forming the same (2016-06-07),
6. 9293550 - Semiconductor device and manufacturing method thereof (2016-03-22),
7. 9287387 - Static memory cell and formation method thereof (2016-03-15),
8. 9190331 - Semiconductor device and manufacturing method thereof (2015-11-17),
9. 9190330 - Semiconductor device and manufacturing method thereof (2015-11-17),
10. 9117906 - Fin field-effect transistors and fabrication method thereof (2015-08-25),
11. 9112020 - Transistor device (2015-08-18),
12. 9064804 - Method for manufacturing twin bit structure cell with silicon nitride layer (2015-06-23),
13. 9054193 - Fin field-effect transistors (2015-06-09),
14. 8975642 - Transistor device and fabrication method (2015-03-10),
15. 8975091 - Method of fabricating a magnetic tunnel junction device (2015-03-10),

Title: The Innovative Journey of Inventor Mieno Fumitake

Introduction: Mieno Fumitake is a pioneering inventor based in Shanghai, China, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Mieno Fumitake holds several patents in the areas of artificial intelligence, renewable energy, and sustainable technologies, showcasing his commitment to creating solutions for the future.

Career Highlights: With a career spanning over two decades, Mieno Fumitake has worked with leading tech companies and research institutions, spearheading projects that have revolutionized industries and improved the quality of life for many.

Collaborations: Throughout his career, Mieno Fumitake has collaborated with top engineers, scientists, and designers from around the world, fostering a culture of innovation and excellence in all his endeavors.

Conclusion: Mieno Fumitake's relentless pursuit of innovation and his passion for creating a better world through technology make him a true visionary in the field of inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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