The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2016
Filed:
Apr. 15, 2015
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Mieno Fumitake, Shanghai, CN;
Abstract
The present disclosure provides a static memory cell and fabrication method. A first fin part is formed on a semiconductor substrate. An isolation layer is formed to cover a lower portion of sidewalls of the first fin part. A first dummy gate structure is formed across the first fin part. A dielectric layer is formed on the isolation layer. A mask layer is formed on the dielectric layer with a first opening to expose the top surface of the first dummy gate structure. The first dummy gate structure is removed through the first opening to form a first trench exposing the first fin part. A portion of the isolation layer is removed through the first opening to form a second trench exposing a portion of sidewalls of the first fin part below the top surface of the isolation layer. A first gate structure is formed by filling up the first and the second trenches.