The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Oct. 14, 2014
Applicant:
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Inventor:
Mieno Fumitake, Shanghai, CN;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/16 (2006.01); H01L 29/08 (2006.01); H01L 29/267 (2006.01); H01L 29/735 (2006.01); H01L 29/10 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 29/0808 (2013.01); H01L 29/0817 (2013.01); H01L 29/0821 (2013.01); H01L 29/1008 (2013.01); H01L 29/267 (2013.01); H01L 29/6625 (2013.01); H01L 29/735 (2013.01); H01L 29/165 (2013.01);
Abstract
A transistor includes a semiconductor substrate comprising a first region and a second region. The transistor further includes an emitter and a base disposed on the first region, and a collector disposed on the second region. The emitter includes a heterojunction. The heterojunction is at a same height as a junction between two different insulating materials that separate the emitter and the base.