The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2015
Filed:
Jul. 09, 2014
Applicant:
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Inventors:
Huaxiang Yin, Shanghai, CN;
Mieno Fumitake, Shanghai, CN;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 29/66477 (2013.01); H01L 29/66545 (2013.01); H01L 29/66803 (2013.01); H01L 29/0684 (2013.01); H01L 29/1033 (2013.01);
Abstract
A method is provided for fabricating a fin field-effect transistor. The method includes providing a semiconductor substrate; and forming a plurality of fins on top of the semiconductor substrate. The method also includes forming isolation structures between adjacent fins; and forming doping sidewall spacers in top portions of the isolation structures near the fins. Further, the method includes forming a punch-through stop layer at the bottom of each of the fins by thermal annealing the doping sidewall spacers; and forming a high-K metal gate on each of the fins.