The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2015
Filed:
Sep. 09, 2014
Applicant:
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Inventors:
Min-Hwa Chi, Beijing, CN;
Mieno Fumitake, Beijing, CN;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/82 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01);
Abstract
The present disclosure relates to a magnetic tunnel junction (MTJ) device and its fabricating method. Through forming MTJ through a damascene process, device damage due to the etching process and may be avoided. In some embodiments, a spacer is formed between a first portion and a second portion of the MTJ to prevent the tunnel insulating layer of the MTJ from being damaged in subsequent processes, greatly increasing product yield thereby. In other embodiments, signal quality may be improved and magnetic flux leakage may be reduced through the improved cup-shaped MTJ structure of this invention.