Shanghai, China

Min-Hwa Chi

USPTO Granted Patents = 13 

Average Co-Inventor Count = 2.8

ph-index = 4

Forward Citations = 478(Granted Patents)


Location History:

  • Beijing, CN (2013 - 2015)
  • Shanghai, CN (2010 - 2020)

Company Filing History:


Years Active: 2010-2020

where 'Filed Patents' based on already Granted Patents

13 patents (USPTO):

Title: Innovations by Inventor Min-Hwa Chi in Flash Memory Technology

Introduction

Min-Hwa Chi is a prominent inventor based in Shanghai, China, recognized for his contributions to the field of flash memory technology. With a remarkable portfolio comprising 13 patents, he has been instrumental in advancing the architecture and functionality of memory devices, particularly in complex semiconductor environments.

Latest Patents

Among Min-Hwa Chi's latest patents is the innovation titled "Structures of bottom select transistor for embedding 3D-NAND in BEOL and methods." This patent describes a flash memory device that employs a substrate and an electrode layer, where the memory cell features a sophisticated channel structure. The structure includes various layers, such as a channel layer, tunneling insulator layer, and charge trapping layer, all designed to enhance the performance and efficiency of memory devices while ensuring compatibility with back-end processes.

Another significant patent is for a "flash memory device and manufacture thereof." This innovation details a memory unit comprising a channel structure with a meticulously arranged series of layers, which drastically reduces leakage current. The patent emphasizes a comprehensive design approach that integrates the components for optimal performance, reflecting Min-Hwa Chi's expertise in semiconductor technology.

Career Highlights

Min-Hwa Chi has made substantial strides in his career, particularly through his work with leading companies in the semiconductor industry. He has been associated with Semiconductor Manufacturing International Corporation (Shanghai) and Semiconductor Manufacturing International Corporation (Beijing), where he has contributed to cutting-edge research and development projects.

Collaborations

Throughout his career, Min-Hwa Chi has collaborated with distinguished professionals in the industry, including colleagues Deyuan Xiao and Hua Ji. Working alongside these talented individuals, he has been able to push the boundaries of technology and innovation in memory devices.

Conclusion

Min-Hwa Chi's innovative spirit and dedication to advancing flash memory technology make him a noteworthy figure in the field. With his impressive collection of patents and valuable collaborations, he continues to play a crucial role in shaping the future of memory devices, ensuring high performance and efficiency in an ever-evolving technological landscape.

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