The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2012
Filed:
Jun. 17, 2008
Hua Ji, Shanghai, CN;
Min-hwa Chi, Shanghai, CN;
Fumitake Mieno, Shanghai, CN;
Sean Fuxiong Zhang, Shanghai, CN;
Hua Ji, Shanghai, CN;
Min-Hwa Chi, Shanghai, CN;
Fumitake Mieno, Shanghai, CN;
Sean Fuxiong Zhang, Shanghai, CN;
Abstract
There is provided a method of manufacturing a semiconductor device, including the following steps: flowing a first precursor gas to the semiconductor substrate within a ALD chamber to form a first discrete monolayer on the semiconductor substrate; flowing an inert purge gas to the semiconductor substrate within the ALD chamber; flowing a second precursor gas to the ALD chamber to react with the first precursor gas which has formed the first monolayer, thereby forming a first discrete compound monolayer; and flowing an inert purge gas; forming a first dielectric layer to cover the discrete compound monolayer; forming a second third monolayer above first dielectric layer; and forming a second discrete compound monolayer; and forming a second dielectric layer to cover the second discrete compound monolayer above the first dielectric layer. There is also provided a semiconductor device formed by the ALD method.