The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
Jul. 11, 2013
Semiconductor Manufacturing International Corporation (Shanghai), Shanghhai, CN;
Mieno Fumitake, Shanghai, CN;
Abstract
The present invention discloses a semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes a gate insulating layer formed on an inner wall of a substrate recess, a work function material layer formed on the gate insulating layer so as to apply a tensile stress or a compressive stress to a channel of a MOS field-effect transistor, and a gate metal formed on the work function material layer. The method for manufacturing the semiconductor device includes forming a work function material layer on a gate insulating layer so as to apply a tensile stress or a compressive stress to a channel of a MOS field-effect transistor, wherein the gate insulating layer is formed on an inner wall of a substrate recess, and depositing a gate metal on the work function material layer.