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For the Inventor, By the Inventor

Pound Ridge, NY, United States of America

Matthew Joseph BrightSky

This inventor holds 55 USPTO granted patents and 8 published patent applications, primarily in Phase Change Memory (CPC class H01L). Top assignees: International Business Machines Corporation, Macronix International Co., Ltd., Globalfoundries Inc.. Active years: 2013-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Matthew Joseph BrightSky. Retrieved from https://idiyas.com/inventor/matthew-joseph-brightsky

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 55 

% Patents Active = 69.1

Average Co-Inventor Count = 3.4

ph-index = 8

Forward Citations = 157(Granted Patents)

Forward Citations (Not Self Cited) = 124(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Essex Junction, VT (US) (2013 - 2016)
  • Pound Ridge, NY (US) (2014 - 2021)
  • Armonk, NY (US) (2019 - 2024)

Company Filing History:

goldMedal53 out of 166,325 
 
International Business Machines Corporation
 patents
silverMedal4 out of 3,609 
 
Macronix International Co., Ltd.
 patents
bronzeMedal1 out of 5,671 
 
Globalfoundries Inc.
 patents
4. 1 out of 59 
 
Globalfoundries U.S. 2 LLC
 patents
5. 1 out of 446 
 
Ulvac, Inc.
 patents
where one patent can have more than one assignee

Years Active: 2013-2025

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Areas of Expertise:
Phase Change Memory
3D Memory
Multi-Layer Devices
Bipolar Switching
Crystallized Silicon
Thermal Barrier Layer
Memory Array
Selective Growth
High Endurance
Integrated Diodes
Chemical Vapor Deposition
Access Devices
55 patents (USPTO):Explore Patents
1. 12342736 - Phase-change memory cell with mixed-material switchable region (2025-06-24),
2. 12004434 - Fill-in confined cell PCM devices (2024-06-04),
3. 11889773 - Multi-layer phase change memory device (2024-01-30),
4. 11723293 - Reactivation of a deposited metal liner (2023-08-08),
5. 11647683 - Phase change memory cell with a thermal barrier layer (2023-05-09),
6. 11621394 - Multi-layer phase change memory device (2023-04-04),
7. 11562931 - 3D stackable bidirectional access device for memory array (2023-01-24),
8. 11557343 - Pulsing synaptic devices based on phase-change memory to increase the linearity in weight update (2023-01-17),
9. 11557342 - Multi-level cell threshold voltage operation of one-selector-one-resistor structure included in a crossbar array (2023-01-17),
10. 11456417 - Integrated phase change memory cell projection liner and etch stop layer (2022-09-27),
11. 11355706 - Single-sided liner PCM cell for 3D crossbar PCM memory (2022-06-07),
12. 11257866 - Integrated reactive material erasure element with phase change memory (2022-02-22),
13. 11139025 - Multi-level cell threshold voltage operation of one-selector-one-resistor structure included in a crossbar array (2021-10-05),
14. 10971546 - Crosspoint phase change memory with crystallized silicon diode access device (2021-04-06),
15. 10930705 - Crystallized silicon vertical diode on BEOL for access device for confined PCM arrays (2021-02-23),

Title: The Inventor Behind 53 Patents: Matthew Joseph BrightSky

Introduction:

Matthew Joseph BrightSky, a prolific inventor based in Pound Ridge, NY, has made significant contributions to the field of phase change memory devices. With an impressive portfolio of 53 patents, BrightSky continues to push the boundaries of innovation in semiconductor technology.

Latest Patents:

One of BrightSky's latest patents includes the development of a multi-layer phase change memory device. This innovation features a unique design with first and second phase change layers, each comprised of different materials with varying resistivity levels. Another notable patent is focused on the reactivation of a deposited metal liner in semiconductor structures for phase change memory devices, ensuring optimal performance and electrical resistance.

Career Highlights:

Throughout his career, BrightSky has worked with renowned companies such as IBM (International Business Machines Corporation) and Macronix International Co., Ltd. His experience in these leading organizations has undoubtedly influenced his innovative approach to developing cutting-edge technologies in the semiconductor industry.

Collaborations:

BrightSky has collaborated with esteemed professionals in the field, including Chung H Lam and Fabio Carta. Together, they have shared their expertise and knowledge to drive forward groundbreaking advancements in phase change memory devices and related technologies.

Conclusion:

Matthew Joseph BrightSky's remarkable journey as an inventor is exemplified by his numerous patents and groundbreaking innovations in the semiconductor industry. His dedication to pushing the boundaries of technology and collaborating with industry experts underscores his commitment to driving progress and shaping the future of memory devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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