The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2023

Filed:

Sep. 20, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Matthew Joseph BrightSky, Armonk, NY (US);

Praneet Adusumilli, Somerset, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H10N 70/828 (2023.02); H10N 70/011 (2023.02); H10N 70/231 (2023.02); H10N 70/826 (2023.02); H10N 70/8413 (2023.02);
Abstract

A method may include forming a bottom electrode in an interlayer dielectric, depositing a liner on top of the bottom electrode, depositing a phase change material layer on top of the liner, wherein a top surface of the liner is in direct contact with a bottom surface of the phase change material layer, and depositing a barrier on top of the phase change material layer, wherein a top surface of the phase change material layer is in direct contact with a bottom surface of the barrier. The barrier may be made of doped phase change material. The forming of the bottom electrode may further include forming a via in the interlayer dielectric, depositing an outer layer along a bottom and a sidewall of the via, depositing a middle layer on top of the outer layer, and depositing an inner layer on top of the middle layer.


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