The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2024

Filed:

Nov. 02, 2020
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Praneet Adusumilli, Somerset, NJ (US);

Matthew Joseph BrightSky, Armonk, NY (US);

Guy M. Cohen, Ossining, NY (US);

Robert L. Bruce, White Plains, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/8418 (2023.02); H10N 70/043 (2023.02); H10N 70/066 (2023.02); H10N 70/231 (2023.02); H10N 70/826 (2023.02); H10N 70/8828 (2023.02);
Abstract

A method for manufacturing a phase-change memory device includes providing a substrate including a plurality of bottom electrodes, patterning the substrate to form a plurality of pores in the substrate extending from a surface of the substrate to the bottom electrodes, depositing a phase-change material over the substrate, implanting one or more of a Ge, Sb and Te in the phase-change material to amorphize at least a portion of the phase-change material inside the pore, planarizing the device to exposed the surface of the substrate, and forming a plurality of top electrodes over the pores, in contact with the phase-change material.


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