The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2023
Filed:
Jun. 17, 2021
International Business Machines Corporation, Armonk, NY (US);
Fabio Carta, Pleasantville, NY (US);
Matthew Joseph BrightSky, Armonk, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of manufacturing a vertical metal-semiconductor field-effect transistor (MESFET) device is provided. The method includes forming a first oxide layer, forming a first electrode in the oxide layer, forming a crystallized silicon layer on the first electrode, forming a second electrode on the first oxide layer and on sidewalls of the crystalized silicon layer, forming a second oxide layer on upper surfaces of the second electrode. The method also includes forming a third electrode on an upper surface of the crystallized silicon layer.