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For the Inventor, By the Inventor

Tokorozawa, Japan

Masao Tamura

USPTO Granted Patents = 16

Average Co-Inventor Count = 5.6

ph-index = 12

Forward Citations = 411(Granted Patents)


Company Filing History:

goldMedal16 out of 42,517 
 
Hitachi, Ltd.
 patents

Years Active: 1982-1994

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16 patents (USPTO):Explore Patents
1. 5357131 - Semiconductor memory with trench capacitor (1994-10-18),
2. 5113072 - Device having superlattice structure, and method of and apparatus for (1992-05-12),
3. 4984030 - Vertical MOSFET DRAM (1991-01-08),
4. 4983540 - Method of manufacturing devices having superlattice structures (1991-01-08),
5. 4808546 - SOI process for forming a thin film transistor using solid phase epitaxy (1989-02-28),
6. 4751557 - Dram with FET stacked over capacitor (1988-06-14),
7. 4729964 - Method of forming twin doped regions of the same depth by high energy (1988-03-08),
8. 4716127 - Method of implanting spatially controlled P-N junctions by focused ion (1987-12-29),
9. 4655875 - Ion implantation process (1987-04-07),
10. 4599133 - Method of producing single-crystal silicon film (1986-07-08),
11. 4565584 - Method of producing single crystal film utilizing a two-step heat (1986-01-21),
12. 4551742 - Solid-state imaging device (1985-11-05),
13. 4498951 - Method of manufacturing single-crystal film (1985-02-12),
14. 4394191 - Stacked polycrystalline silicon film of high and low conductivity layers (1983-07-19),
15. 4377421 - Method of making a stacked emitter in a bipolar transistor by selective (1983-03-22),

Title: Masao Tamura: Innovator in Semiconductor Technology

Introduction

Masao Tamura is a prominent inventor based in Tokorozawa, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 16 patents. His work has advanced the development of innovative devices and methods that enhance the performance and efficiency of semiconductor memory.

Latest Patents

Among his latest patents is a groundbreaking semiconductor memory with a trench capacitor. This invention features a design where a part of each capacitor is formed on the side walls of an island region, which is surrounded by a recess in a semiconductor substrate. This design allows for electrical isolation between the island region and other regions. Another notable patent is for a device having a superlattice structure, along with a method and apparatus for its formation. This apparatus includes a high-intensity ion source and is capable of forming fine grooves and films by supplying a reactive gas while irradiating a focused ion beam. The technology also incorporates a mechanism to repair defects arising from ion beam processing.

Career Highlights

Masao Tamura is associated with Hitachi, Ltd., a leading company in the technology sector. His work at Hitachi has been instrumental in pushing the boundaries of semiconductor technology. His innovative approaches have led to advancements that are crucial for modern electronic devices.

Collaborations

Throughout his career, Tamura has collaborated with notable colleagues, including Masanobu Miyao and Yasuo Wada. These collaborations have fostered a creative environment that has resulted in significant technological advancements.

Conclusion

Masao Tamura's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of advanced electronic devices, showcasing the importance of innovation in technology.

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