The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 1983
Filed:
Dec. 17, 1980
Applicant:
Inventors:
Yasuo Wada, Tokyo, JP;
Hiroo Usui, Machida, JP;
Makoto Ohkura, Hachioji, JP;
Masanobu Miyao, Tokorozawa, JP;
Masao Tamura, Tokorozawa, JP;
Takashi Tokuyama, Higashikurume, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; B05D / ;
U.S. Cl.
CPC ...
148 331 ; 148-15 ; 148187 ; 357 59 ; 357 91 ;
Abstract
A polycrystalline silicon film is implanted with an impurity in large amounts and is heated to be annealed, whereupon it is irradiated with a laser beam to be annealed. Thus, a polycrystalline silicon film of very low resistivity consisting of a second layer whose activated impurity concentration is equal to or below a solid solubility and a first layer whose activated impurity concentration is above the solid solubility is formed.