The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 1987
Filed:
Mar. 04, 1986
Applicant:
Inventors:
Yasuo Wada, Bunkyo, JP;
Masao Tamura, Tokorozawa, JP;
Nobuyoshi Natsuaki, Higashiyamato, JP;
Kiyonori Ohyu, Hachioji, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C / ; C23C / ; C03C / ; C03C / ;
U.S. Cl.
CPC ...
156643 ; 29571 ; 2957 / ; 2957 / ; 148187 ; 156652 ; 156653 ; 156656 ; 156657 ; 1566591 ; 20419232 ;
Abstract
Ions having a high energy is implanted using a mask of a stacked film consisting of a film formed from an amorphous material and a film formed from a metal having a large mass number. In this way, penetration of ions can be prohibited by a mask having a far smaller thickness than that of the conventional mask. Thus ions having a high energy can be implanted with a very high accuracy.