The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 1988
Filed:
Apr. 15, 1986
Nobuyoshi Natsuaki, Higashiyamato, JP;
Masao Tamura, Tokorozawa, JP;
Yasuo Wada, Tokyo, JP;
Kiyonori Ohyu, Hachioji, JP;
Tadashi Suzuki, Kokubunji, JP;
Hidekazu Okuhira, Kokubunji, JP;
Akira Shintani, Machida, JP;
Shoji Syukuri, Koganei, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
First conductivity type impurity ions are implanted at a predetermined depth all over a region where impurity ions are to be implanted, and second conductivity type impurity ions are implanted in a dose about twice as large as that of the first conductivity type impurity ions at substantially the same implantation depth of the first conductivity type impurity ions, followed by annealing. In this way, mutually contiguous first and second conductivity type regions having substantially the same impurity concentrations and located at substantially the same depths are formed.