Company Filing History:
Years Active: 1988
Title: The Innovative Contributions of Shoji Syukuri
Introduction
Shoji Syukuri is a notable inventor based in Koganei, Japan. He has made significant contributions to the field of semiconductor technology. His work has led to advancements that are crucial for the development of modern electronic devices.
Latest Patents
One of Shoji Syukuri's key patents is titled "Method of forming twin doped regions of the same depth by high energy." This innovative method involves implanting first conductivity type impurity ions at a predetermined depth across a designated region. Subsequently, second conductivity type impurity ions are implanted at a dose approximately twice that of the first type, at nearly the same depth. This process is followed by annealing, resulting in the formation of mutually contiguous first and second conductivity type regions. These regions possess substantially the same impurity concentrations and are located at similar depths, enhancing the efficiency of semiconductor devices.
Career Highlights
Shoji Syukuri is associated with Hitachi, Ltd., a leading company in the technology sector. His work at Hitachi has allowed him to explore and develop innovative solutions in semiconductor technology. His contributions have been instrumental in advancing the capabilities of electronic components.
Collaborations
Throughout his career, Shoji Syukuri has collaborated with esteemed colleagues such as Nobuyoshi Natsuaki and Masao Tamura. These collaborations have fostered a creative environment that has led to groundbreaking innovations in their field.
Conclusion
In summary, Shoji Syukuri's contributions to semiconductor technology through his innovative patent and work at Hitachi, Ltd. highlight his importance as an inventor. His advancements continue to influence the development of modern electronics.