Hitachi, Ltd.

Shoji Syukuri

Yasuo Wada

Nobuyoshi Natsuaki

Kiyonori Ohyu

Masao Tamura

Tadashi Suzuki

Hidekazu Okuhira

Akira Shintani

First conductivity type impurity ions are implanted at a predetermined depth all over a region where impurity ions are to be implanted, and second conductivity type impurity ions are implanted in a dose about twice as large as that of the first conductivity type impurity ions at substantially the same implantation depth of the first conductivity type impurity ions, followed by annealing. In this way, mutually contiguous first and second conductivity type regions having substantially the same impurity concentrations and located at substantially the same depths are formed.

Method of forming twin doped regions of the same depth by high energy

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Koganei, Japan

Shoji Syukuri