The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 1986
Filed:
Jan. 25, 1983
Applicant:
Inventors:
Masao Tamura, Tokorozawa, JP;
Makoto Ohkura, Hachioji, JP;
Masanobu Miyao, Tokorozawa, JP;
Nobuyoshi Natsuaki, Kodaira, JP;
Naotsugu Yoshihiro, Matsudo, JP;
Takashi Tokuyama, Higashikurume, JP;
Hiroshi Ishihara, Ohta, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148-15 ; 2957 / ; 2957 / ; 29578 ; 148174 ; 148175 ; 148D / ; 148D / ; 148D / ; 148D / ; 156603 ; 156612 ; 156D / ; 156D / ; 427 531 ; 427 86 ;
Abstract
An amorphous or polycrystalline film which continuously covers the exposed surface of a single crystal substrate and an insulating film, is deposited in ultra-high vacuum and then heat-treated. The film is subjected to solid phase epitaxial growth at a temperature far lower than in prior-art methods, whereby a single crystal film is formed.