The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 1985
Filed:
Sep. 24, 1982
Applicant:
Inventors:
Masao Tamura, Tokorozawa, JP;
Naotsugu Yoshihiro, Matsudo, JP;
Nobuyoshi Natsuaki, Kodaira, JP;
Masanobu Miyao, Tokorozawa, JP;
Makoto Ohkura, Hachioji, JP;
Hideo Sunami, Nishitama, JP;
Takashi Tokuyama, Higashikurume, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
156612 ; 1566 / ; 156D / ; 156D / ;
Abstract
The whole surface of a polycrystalline or amorphous semiconductor film deposited so as to continuously cover the surface of a single-crystal substrate and an insulating film is irradiated with a laser beam or electron beam, thereby to selectively melt only those parts of the polycrystalline or amorphous semiconductor film which overlie the insulating film. Thus, a single-crystal semiconductor film is formed only the insular insulating film formed on the single-crystal substrate.