The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 1986
Filed:
May. 04, 1983
Applicant:
Inventors:
Masanobu Miyao, Tokorozawa, JP;
Makoto Ohkura, Hachioji, JP;
Iwao Takemoto, Nishitama, JP;
Masao Tamura, Tokorozawa, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
1566 / ;
Abstract
On a semiconductor substrate surface, a plurality of polycrystalline or amorphous silicon films and a plurality of insulator films which are substantially transparent to an irradiating energy beam and each of which has an opening are formed so as to be alternately stacked. Thereafter, the plurality of polycrystalline or amorphous silicon films are turned into a single crystal by irradiating them with the energy beam.