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For the Inventor, By the Inventor

Nirasaki, Japan

Masahiro Ogasawara

This inventor holds 26 USPTO granted patents, primarily in Plasma Etching Technology. Top assignees: Tokyo Electron Limited, Kabushiki Kaisha Toshiba, Matsushita Electric Industrial Co., Ltd.. Active years: 1994-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masahiro Ogasawara. Retrieved from https://idiyas.com/inventor/masahiro-ogasawara

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 26

% Patents Active = 88.5

Average Co-Inventor Count = 3.3

ph-index = 12

Forward Citations = 753(Granted Patents)


Location History:

  • Hachioji, JP (1994 - 1995)
  • Tokyo, JP (1995 - 1996)
  • Koufu, JP (1998)
  • Kofu, JP (1999)
  • Yamanashi, JP (2005 - 2007)
  • Nirasaki, JP (2007 - 2015)
  • Miyagi, JP (2016 - 2022)

Company Filing History:

goldMedal26 out of 10,904 
 
Tokyo Electron Limited
 patents
silverMedal2 out of 53,262 
 
Kabushiki Kaisha Toshiba
 patents
bronzeMedal1 out of 27,375 
 
Matsushita Electric Industrial Co., Ltd.
 patents
4. 1 out of 5,300 
 
Nippon Telegraph and Telephone Corporation
 patents
5. 1 out of 71 
 
Tokyo Electron Yamanashi Limited
 patents
where one patent can have more than one assignee

Years Active: 1994-2022

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Areas of Expertise:
Etching Method
Plasma Processing
Substrate Processing
Dry Etching
Silicon Oxide Film
Control Program
Electrode Plate
Exhaust Ring
Electrostatic Chuck
Magnetron Plasma
Plasma Apparatus
Storage Medium
26 patents (USPTO):Explore Patents
1. 11404279 - Etching method and substrate processing apparatus (2022-08-02),
2. 11257662 - Annular member, plasma processing apparatus and plasma etching method (2022-02-22),
3. 9865471 - Etching method and etching apparatus (2018-01-09),
4. 9716014 - Method of processing workpiece (2017-07-25),
5. 9530657 - Method of processing substrate and substrate processing apparatus (2016-12-27),
6. 9257301 - Method of etching silicon oxide film (2016-02-09),
7. 8986561 - Substrate processing method and storage medium (2015-03-24),
8. 8815106 - Method of supplying etching gas and etching apparatus (2014-08-26),
9. 8642482 - Plasma etching method, control program and computer storage medium (2014-02-04),
10. 8609549 - Plasma etching method, plasma etching apparatus, and computer-readable storage medium (2013-12-17),
11. 8512510 - Plasma processing method and apparatus (2013-08-20),
12. 8298960 - Plasma etching method, control program and computer storage medium (2012-10-30),
13. 7506610 - Plasma processing apparatus and method (2009-03-24),
14. 7494561 - Plasma processing apparatus and method, and electrode plate for plasma processing apparatus (2009-02-24),
15. 7351665 - Plasma etching method, plasma etching apparatus, control program, computer recording medium and recording medium having processing recipe recorded thereon (2008-04-01),

Title: The Innovations of Masahiro Ogasawara: A Leader in Plasma Processing Technologies

Introduction

Masahiro Ogasawara, an esteemed inventor from Nirasaki, Japan, is renowned for his significant contributions to the field of plasma processing. With an impressive portfolio comprising 26 patents, Ogasawara has played a pivotal role in advancing technologies that enhance substrate processing in various applications.

Latest Patents

Ogasawara's latest innovations include two notable patents:

1. **Etching Method and Substrate Processing Apparatus** - This patent outlines a method for etching a boron film or a boron-containing film. The method involves preparing the substrate, supplying a process gas that contains chlorine gas, fluorine-containing gas, and hydrogen-containing gas, and etching the film using plasma.

2. **Annular Member, Plasma Processing Apparatus and Plasma Etching Method** - This invention introduces an annular member designed to encircle a pedestal that holds the substrate within a plasma processing apparatus. The annular member is crafted from quartz and silicon, with a silicon content ranging from 2.5% to 10% by weight.

Career Highlights

Throughout his career, Masahiro Ogasawara has made significant strides in the industry, contributing his expertise to prominent companies such as Tokyo Electron Limited and Kabushiki Kaisha Toshiba. His work has been instrumental in pushing the boundaries of what is possible in plasma technology and processing equipment.

Collaborations

Ogasawara has also collaborated with notable professionals in the field, including Akira Koshiishi and Sungtae Lee. These partnerships have fostered innovative approaches to plasma processing, enriching the technical community and resulting in groundbreaking inventions.

Conclusion

Masahiro Ogasawara's exceptional body of work exemplifies the spirit of innovation and dedication to advancing technology. His patents continue to influence the fields of etching and plasma processing, solidifying his legacy as a leading inventor in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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