The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
May. 16, 2011
Akira Koshiishi, Nirasaki, JP;
Jun Hirose, Nirasaki, JP;
Masahiro Ogasawara, Nirasaki, JP;
Taichi Hirano, Nirasaki, JP;
Hiromitsu Sasaki, Kurihara-gun, JP;
Tetsuo Yoshida, Nirasaki, JP;
Michishige Saito, Nirasaki, JP;
Hiroyuki Ishihara, Nirasaki, JP;
Jun Ooyabu, Nirasaki, JP;
Kohji Numata, Kyoto, JP;
Akira Koshiishi, Nirasaki, JP;
Jun Hirose, Nirasaki, JP;
Masahiro Ogasawara, Nirasaki, JP;
Taichi Hirano, Nirasaki, JP;
Hiromitsu Sasaki, Kurihara-gun, JP;
Tetsuo Yoshida, Nirasaki, JP;
Michishige Saito, Nirasaki, JP;
Hiroyuki Ishihara, Nirasaki, JP;
Jun Ooyabu, Nirasaki, JP;
Kohji Numata, Kyoto, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate.