The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2013
Filed:
Mar. 11, 2011
Sungtae Lee, Kofu, JP;
Masahiro Ogasawara, Nirasaki, JP;
Junichi Sasaki, Hwaseng, KR;
Naohito Yanagida, Nirasaki, JP;
Sungtae Lee, Kofu, JP;
Masahiro Ogasawara, Nirasaki, JP;
Junichi Sasaki, Hwaseng, KR;
Naohito Yanagida, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A plasma etching method is provided to perform a plasma etching on a silicon oxide film or a silicon nitride film formed below an amorphous carbon film by using a pattern of the amorphous carbon film as a final mask in a multilayer mask including a photoresist layer having a predetermined pattern, an organic bottom anti-reflection coating (BARC) film formed below the photoresist layer, an SiON film formed below the BARC film, and the amorphous carbon film formed below the SiON film. An initial mask used at the time when the plasma etching of the silicon oxide film or the silicon nitride film is started is under a state in which the SiON film remains on the amorphous carbon film and a ratio of a film thickness of the amorphous carbon film to a film thickness of the residual SiON film is smaller than or equal to about 14.