Sungtae Lee

Title: Innovations of Sungtae Lee

Introduction

Sungtae Lee is a prominent inventor based in Nirasaki, Japan. He has made significant contributions to the field of substrate processing and plasma etching, holding a total of 5 patents. His work is instrumental in advancing technologies used in semiconductor manufacturing.

Latest Patents

One of his latest patents is a substrate processing method and storage medium. This invention discloses a method for etching a substrate that includes a target layer, a mask layer, and an intermediate layer stacked on the target layer. The method involves forming a pattern on the target layer via the intermediate and mask layers, with specific processing pressures and gas mixtures used for etching.

Another notable patent is a plasma etching method, control program, and computer storage medium. This method involves plasma-etching a target substrate that includes a film to be etched, an organic film serving as a mask, and a Si-containing film. The process includes multiple steps to ensure precise etching and pattern formation.

Career Highlights

Sungtae Lee is currently employed at Tokyo Electron Limited, a leading company in the semiconductor industry. His expertise in substrate processing and plasma etching has positioned him as a valuable asset in the field.

Collaborations

He has collaborated with notable coworkers, including Masahiro Ogasawara and Junichi Sasaki, contributing to various innovative projects and advancements in technology.

Conclusion

Sungtae Lee's contributions to substrate processing and plasma etching are significant, with multiple patents showcasing his innovative spirit. His work continues to influence the semiconductor industry and drive technological advancements.