The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Dec. 23, 2009
Applicants:
Sungtae Lee, Nirasaki, JP;
Masahiro Ogasawara, Nirasaki, JP;
Masahiro Ito, Nirasaki, JP;
Inventors:
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C03C 15/00 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31138 (2013.01); H01L 21/31116 (2013.01); H01L 21/31122 (2013.01); H01L 21/31144 (2013.01);
Abstract
Disclosed is a substrate processing method of etching a substrate including a target layer, and a mask layer and an intermediate layer that are stacked on the target layer, to form a pattern on the target layer via the intermediate layer and the mask layer. The intermediate layer is etched under a processing pressure of 100 mTorr (1.33×10 Pa) to 150 mTorr (2.0×10 Pa) by using as a processing gas a mixture gas of CF, CHF, and CF, and the mask layer is etched by using a COS-containing gas as a processing gas.