The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2018
Filed:
Apr. 20, 2016
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Gaku Shimoda, Miyagi, JP;
Hotaka Maruyama, Miyagi, JP;
Takanori Sato, Miyagi, JP;
Masafumi Urakawa, Miyagi, JP;
Masahiro Ogasawara, Miyagi, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01J 37/32091 (2013.01); H01J 37/32449 (2013.01); H01J 37/32165 (2013.01); H01J 37/32724 (2013.01); H01J 2237/334 (2013.01); H01J 2237/3345 (2013.01); H01J 2237/3348 (2013.01); H01L 21/67109 (2013.01);
Abstract
A method for etching a silicon film formed on a substrate includes supplying HBr gas, NFgas, and Ogas into a chamber and performing a plurality of etching processes on the silicon film with a plasma generated by the supplied HBr gas, NFgas, and Ogas, gradually reducing a flow rate of the HBr gas during the plurality of etching processes, and adjusting a flow rate of the Ogas according to the reduction of the HBr gas.