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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9257301 B1

PDFFull Text
Expired
Date of Patent:
Feb. 09, 2016

Filed:

Aug. 19, 2014

Method of etching silicon oxide film

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Masahiro Ogasawara, Miyagi, JP;

Masafumi Urakawa, Miyagi, JP;

Yoshinobu Hayakawa, Miyagi, JP;

Kazuhiro Kubota, Miyagi, JP;

Hikaru Watanabe, Miyagi, JP;

Assignee:

TOKYO ELECTRON LIMITED, Tokyo, JP;

Attorney:

Rothwell, Figg, Ernst & Manbeck, P.C.

Primary Examiner:

Nadine Norton

Assistant Examiner:

Maki Angadi

Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/31116 (2013.01); H01J 37/32091 (2013.01); H01L 21/32136 (2013.01); H01L 21/32137 (2013.01);
Abstract

Provided is a method of etching a silicon oxide film. The method includes exposing a workpiece including the silicon oxide film and a mask formed on the silicon oxide film to plasma of a processing gas to etch the silicon oxide film. The mask includes a first film formed on the silicon oxide film and a second film formed on the first film, and the second film is constituted by a film having an etching rate lower than that of the first film with respect to active species in the plasma.

Find Patent Forward Citations

Ogasawara, Masahiro. (2016). Method of etching silicon oxide film (U.S. Patent No. 9257301). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9257301

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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