IDiyas

For the Inventor, By the Inventor

Miyagi, Japan

Hikaru Watanabe

USPTO Granted Patents = 15 

Average Co-Inventor Count = 2.2

ph-index = 3

Forward Citations = 16(Granted Patents)


Company Filing History:

goldMedal15 out of 10,295 
 
Tokyo Electron Limited
 patents

Years Active: 2016-2025

where 'Filed Patents' based on already Granted Patents

15 patents (USPTO):
1. 12230505 - Etching apparatus (2025-02-18),
2. 11264246 - Plasma etching method for selectively etching silicon oxide with respect to silicon nitride (2022-03-01),
3. 11205577 - Method of selectively etching silicon oxide film on substrate (2021-12-21),
4. 11107692 - Etching method (2021-08-31),
5. 10580655 - Plasma etching method for selectively etching silicon oxide with respect to silicon nitride (2020-03-03),
6. 10224211 - Etching method (2019-03-05),
7. 10109495 - Plasma etching method for selectively etching silicon oxide with respect to silicon nitride (2018-10-23),
8. 9852922 - Plasma processing method (2017-12-26),
9. 9754797 - Etching method for selectively etching silicon oxide with respect to silicon nitride (2017-09-05),
10. 9633864 - Etching method (2017-04-25),
11. 9443701 - Etching method (2016-09-13),
12. 9390935 - Etching method (2016-07-12),
13. 9330973 - Workpiece processing method (2016-05-03),
14. 9299579 - Etching method and plasma processing apparatus (2016-03-29),
15. 9257301 - Method of etching silicon oxide film (2016-02-09),

Title: The Innovative Contributions of Hikaru Watanabe

Introduction

Hikaru Watanabe is a prominent inventor based in Miyagi, Japan. He has made significant contributions to the field of plasma etching technology, holding a total of 15 patents. His work focuses on developing advanced etching apparatuses and methods that enhance the precision and efficiency of semiconductor manufacturing processes.

Latest Patents

Watanabe's latest patents include an etching apparatus designed to selectively etch a first region with respect to a second region made of a different material. This apparatus utilizes a plasma of a treatment gas, which includes a fluorocarbon gas, an oxygen-containing gas, and an inert gas. The process involves generating a deposit of fluorocarbon on the workpiece and etching the first region using radicals from this deposit. Another notable patent is a plasma etching method that selectively etches silicon oxide relative to silicon nitride. This method involves generating a plasma of a processing gas containing fluorocarbon and etching the first region by utilizing radicals from the deposit formed on the target object.

Career Highlights

Hikaru Watanabe is currently employed at Tokyo Electron Limited, a leading company in the semiconductor manufacturing equipment industry. His innovative work has contributed to advancements in plasma processing technologies, which are crucial for the production of high-performance electronic devices.

Collaborations

Watanabe has collaborated with notable colleagues, including Akihiro Tsuji and Masanobu Honda. Their combined expertise has fostered a collaborative environment that drives innovation in their field.

Conclusion

Hikaru Watanabe's contributions to plasma etching technology exemplify the impact of innovative thinking in the semiconductor industry. His patents and collaborative efforts continue to shape the future of manufacturing processes.

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