The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Jun. 29, 2015
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01B 13/00 (2006.01); C23F 1/00 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76897 (2013.01); H01L 21/76814 (2013.01); H01L 21/76826 (2013.01); H01L 21/76829 (2013.01);
Abstract
Disclosed is a method of processing a workpiece so as to form an opening that extends from an oxide region to a base layer through a portion between the raised regions. The method includes: (1) a step of forming an opening in the oxide region to expose a second section between the raised regions; and (2) a step of etching a residue made of silicon oxide and existing within the opening and a second section. In the second step, a denatured region is formed by exposing the workpiece to plasma of a mixed gas including a hydrogen-containing gas and NFgas to denature the residue and the second section, and the denatured region is removed.