The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Feb. 16, 2015
Tokyo Electron Limited, Tokyo, JP;
Maju Tomura, Miyagi, JP;
Hikaru Watanabe, Miyagi, JP;
Takahiko Kato, Miyagi, JP;
Masanobu Honda, Miyagi, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
An etching method of selectively etching a first region formed of silicon oxide with respect to a second region formed of silicon nitride includes: a process (a) and a process (b). In the process (a), a target object is exposed to plasma of a fluorocarbon gas and a thickness of a protective film on the second region is larger than a thickness of a protective film formed on the first region. In the process (b), the first region is etched by plasma of a fluorocarbon gas. In the process (a), a temperature of the target object is set to 60° C. or more to 250° C. or less.